ارتباط با من

  • On the low-temperature growth mechanism of single walled carbon nanotubes in plasma enhanced chemical vapor deposition   (1392/8/4)
    On the low-temperature growth mechanism of single walled carbon nanotubes in plasma enhanced chemical vapor deposition Despite significant progress in single walled carbon nanotube (SWCNT) production by plasma enhanced chemical vapor deposition (PECVD), the growth mechanism in this method is not clearly understood. We employ reactive molecular dynamics simulations to investigate how plasma-based deposition allows growth at low temperature. We first investigate the SWCNT growth mechanism at low and high temperatures under conditions similar to thermal CVD and PECVD. We then show how ion bombardment during the nucleation stage increases the carbon solubility in the catalyst at low temperature. مشاهده ادامه
  • The effect of TEOS plasma parameters on the silicon dioxide deposition mechanisms   (1392/1/14)
    The effect of TEOS plasma parameters on the silicon dioxide deposition mechanisms In this study, the effects of tetraethyl orthosilicate (TEOS) plasma parameters on the silicon dioxide deposition mechanisms are studied. The films are deposited by the organometallic based plasma enhanced chemical vapour deposition method. The plasma generator is capacitively coupled radio frequency power source. The plasma is the mixture of organometallic TEOS vapour, oxygen and argon. The effects of the TEOS/O2 pressure ratio (0.05–1.5), the applied power (100–400 W) and the argon gas percentage into the plasma (0–20) on the quality of the film are investigated. The film properties such as structure and chemical composition, surface topography are analysed by Fourier transform infrared spectroscopy and atomic force microscopy. مشاهده ادامه

5.6/10 (تعداد آرا 31 نفر )


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